Light Emitting Device with Air Bars and Method of Manufacturing the Same

A method of manufacturing a light emitting device including a semiconductor layer(s) having an air-bar layer(s) with a plurality of air bars, the method comprising at least one process cycle, for forming the semiconductor layer(s), the process cycle comprising:

• forming a patterning thin-film layer on a substrate or a thin-film layer;
• forming on the patterning thin-film layer an etching guide pattern and an air-bar pattern connected to the etching guide pattern;
• forming a semiconductor layer(s) on the patterns and exposing the etching guide pattern;
• wet-etching the exposed etching guide pattern by using a wet-etching solution;
• and
• etching the air-bar pattern connected to the etching guide pattern.

A method of manufacturing a light emitting device including a plurality of semiconductor layers having an air-bar layer(s) with a plurality of air bars, the method comprising processes of:

• forming a patterning thin-film layer on a substrate or a thin-film layer;
• forming on the patterning thin-film layer an etching guide pattern and an air-bar pattern connected to the etching guide pattern;
• forming a semiconductor layer(s) on the patterns and exposing the etching guide pattern;
• (A) forming a patterning thin-film layer on the semiconductor layer(s);
• (B) forming on the patterning thin-film layer an etching guide pattern and an air bar pattern connected to the etching guide pattern;
• (C) forming an additional semiconductor layer(s) on the patterns and exposing the etching guide pattern;
• continuously repeating the processes (A) to (C) while aligning positions of the exposed etching patterns;
• continuously performing etching along the etching guide patterns, the positions of the etching guide patterns being aligned to connect top to bottom, exposed on each uppermost layer of the semiconductor layers by using a wet-etching solution;
• and
• etching the air-bar patterns connected to the etching guide patterns on the layers.