Light emitting device having plurality of non-polar light emitting cells and method of fabricating the same

A method of fabricating a light emitting device comprising a plurality of non-polar light emitting cells, the method comprising:

• forming stripe-shaped anti-growth patterns on an upper surface of a first substrate, wherein the first substrate comprises sapphire or silicon carbide and the upper surface comprises an r-plane, an a-plane or an m-plane;
• forming recess regions in the upper surface, wherein the anti-growth patterns define openings that expose the first substrate, the recess regions being positioned below the openings of the anti-growth patterns and comprising sidewalls of a c-plane;
• growing nitride semiconductor layers comprising a first conductive-type semiconductor layer and a second conductive-type semiconductor layer on the first substrate, the nitride semiconductor layers being first grown from the sidewalls of the recess regions and aligned with the c-plane thereof, and then being filled in the recess regions and covering the anti-growth patterns;
• forming an etching prevention layer on the nitride semiconductor layers, the etching prevention layer comprising openings that expose the second conductive-type semiconductor layer, the etching prevention layer covering the nitride semiconductor layers at least in middle regions of the recess regions and middle regions of the anti-growth patterns;
• forming electrodes in the openings of the etching prevention layer, the electrodes each comprising an extension extending upward on a top surface of the etching prevention layer, the electrodes being spaced apart from one another;
• forming an interlayer insulating layer on the electrodes;
• bonding a second substrate to the first substrate comprising the interlayer insulating layer;
• removing the first substrate and the anti-growth patterns to expose the first conductive-type semiconductor layer;
• and
• patterning the nitride semiconductor layers so that the etching prevention layer is exposed, thereby forming the plurality of light emitting cells spaced apart from one another.

A light emitting device comprising a plurality of non-polar light emitting cells, the light emitting device comprising:

• a first substrate comprising sapphire or silicon carbide, the first substrate further comprising stripe-shaped recess regions having sidewalls of a c-plane;
• and
• a plurality of non-polar light emitting cells spaced apart from one another by separation regions on the first substrate,
• wherein the separation regions comprise at least middle regions between sidewalls of the respective recess regions and middle regions between adjacent recess regions.

A light emitting device comprising a plurality of non-polar light emitting cells, the light emitting device comprising:

• a substrate;
• a plurality of non-polar light emitting cells positioned to be spaced apart from one another on the substrate, each of the light emitting cells comprising a first conductive-type upper semiconductor layer, an active layer, and a second conductive-type lower semiconductor layer;
• an insulating layer disposed between the first conductive-type upper semiconductor layers of the light emitting cells;
• wires electrically connecting the light emitting cells to one another;
• and
• an interlayer insulating layer covering the wires and interposed between the substrate and the light emitting cells.

A light emitting device comprising a plurality of non-polar light emitting cells, the light emitting device comprising:

• a substrate;
• a plurality of non-polar light emitting cells positioned on the substrate to be spaced apart from one another, each of the light emitting cells comprising a first conductive-type upper semiconductor layer, an active layer, and a second conductive-type lower semiconductor layer;
• electrodes disposed between the substrate and the light emitting cells to be spaced apart from one another, the electrodes being electrically connected to the corresponding second conductive-type lower semiconductor layers, each of the electrodes having an extension extending toward an adjacent one of the light emitting cells;
• an etching prevention layer disposed between light emitting cells and between adjacent electrodes, the etching prevention layer comprising at least a portion extending below edges of adjacent light emitting cells, and the etching prevention layer comprising openings that expose the extensions of the electrodes;
• a side insulating layer covering sides of the light emitting cells;
• and
• wires electrically connecting the light emitting cells, the wires being spaced apart from the sides of the light emitting cells by the side insulating layer, each of the wires having one end electrically connected to the first conductive-type upper semiconductor layer of one of the light emitting cells and the other end electrically connected to the electrode that is electrically connected to the second conductive-type lower semiconductor layer of an adjacent one of the light emitting cells through the opening of the etching prevention layer.