Manufacturing process of a power electronic device integrated in a semiconductor substrate with wide band gap and electronic device thus obtained

An electronic semiconductor power device with wide forbidden bandgap, comprising:

• a semiconductor body having a first conductivity type;
• first and second conductive regions, extending in said semiconductor body and having a second conductivity type, said first and second doped regions facing one another;
• third conductive regions, having the first conductivity type, arranged in the first and second conductive regions;
• and
• at least one gate region arranged on said semiconductor body, at least partially overlapping, and electrically insulated from, the third conductive regions,
• a fourth conductive region extending in the semiconductor body between the first conductive region and the second conductive region and substantially vertically aligned with the gate region.

An electronic device, comprising:

• a first semiconductor layer having a first conductivity;
• first and second body regions disposed in the layer and each having a second conductivity;
• first and second conduction regions respectively disposed in the first and second body regions and each having the first conductivity;
• a protection region disposed in the layer between the first and second body regions and having the second conductivity;
• and
• a gate disposed over the first and second conduction regions and the protection region.

A system, comprising:

• an electronic device, comprising:
• a first semiconductor layer having a first conductivity;
• first and second body regions disposed in the layer and each having a second conductivity;
• first and second conduction regions respectively disposed in the first and second body regions and each having the first conductivity;
• a protection region disposed in the layer between the first and second body regions and having the second conductivity;
• and
• a gate disposed over the first and second conduction regions and the protection region;
• and
• a integrated circuit coupled to the device.

An electronic device, comprising:

• a first semiconductor layer having a first conductivity;
• a body region disposed in the layer and each having a second conductivity;
• a conduction region disposed in the body region and having the first conductivity;
• a gate disposed over the first and second conduction regions and the protection region;
• and
• a stepped gate contact electrically coupled to the gate.

A method, comprising:

• forming a first mask over a semiconductor layer having a first conductivity;
• implanting a dopant of a second conductivity in a first region of the layer exposed by the first mask;
• forming a second mask over the layer;
• implanting a dopant of the first conductivity in a second region of the first region using the second mask;
• removing the masks;
• thermally activating the first and second regions to form body and source regions, respectively, after removing the masks.