Gallium nitride compound semiconductor light-emitting device, method of manufacturing the same, and lamp including the same

Abstract

The present invention provides a gallium nitride compound semiconductor light-emitting device that prevents an increase in the specific resistance of a p-type semiconductor layer due to hydrogen annealing and reduces the specific resistance of a translucent conductive oxide film to lower a driving voltage Vf, a method of manufacturing the same, and a lamp including the same. The method of manufacturing the gallium nitride compound semiconductor light-emitting device includes: forming a positive electrode 15 composed of a translucent conductive oxide film on a p-type GaN layer 14 of a gallium nitride compound semiconductor device; and a hydrogen annealing process of annealing the positive electrode 15 in a gas atmosphere including hydrogen (H2).

Dependencies are inferred from the claim text.