Pixel performance improvement by use of a field shield
AssigneePolymer Vision Limited
InventorsHjalmar Edzer Ayco Huitema, Gerwin Glinck
Life of this patent
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Abstract
A pixel cell (100) and method for making the same for an active matrix display includes a pixel pad (110) and a thin film field effect transistor (106) which selectably couples a signal to activate/deactivate the pixel pad. A field shield (112) is formed on an insulating layer (102) and connected to the pixel pad through the insulating layer such that the field shield extends over at least a portion of the pixel pad. The field shield may extend over the thin film transistor and form a second gate (215) used to enhance the performance of the thin film transistor and the pixel cell.
Claims19
A pixel cell for an active matrix display, comprising:
- a pixel pad (110);
- a thin film field effect transistor (106) which selectably couples a signal to activate/deactivate the pixel pad;
- a field shield (112) formed on an insulating layer (102) and connected to the transistor through the insulating layer such that the field shield extends over at least a portion of an electrode of the pixel cell (110) or the transistor (106).
A pixel cell for an active matrix display, comprising:
- a pixel pad (110);
- a thin film field effect transistor (106) which selectably couples a signal to activate/deactivate the pixel pad;
- a field shield (112) formed on an insulating layer (102) and connected to the transistor through the insulating layer such that the field shield extends over at least a portion of the transistor (106) to form a second gate (215) which enhances the transistor performance.
A method for forming a pixel for active matrix displays, comprising the steps of:
- forming an insulator (102) over a pixel stack (40), the pixel stack including a thin film transistor (106), a pixel pad (110) and addressing lines (45, 47);
- and
- patterning a conductive layer formed over the insulator to form a field shield (112) which connects to the pixel pad, the field shield connecting to the pixel pad through the insulating layer such that the field shield extends over at least a portion of the thin film transistor to form a second gate (215) which enhances the transistor performance.
Dependencies are inferred from the claim text.