Photo-voltaic cell device and display panel

A photo-voltaic cell device, comprising:

• a first electrode;
• an N-type doped silicon-rich dielectric layer, disposed on the first electrode, wherein the N-type doped silicon-rich dielectric layer is doped with an N-type dopant;
• an intrinsic layer, disposed on the N-type doped silicon-rich dielectric layer;
• a P-type doped silicon-rich dielectric layer, disposed on the intrinsic layer, wherein the P-type doped silicon-rich dielectric layer is doped with a P-type dopant;
• and
• a second electrode, disposed on the P-type doped silicon-rich dielectric layer.

A display panel, having a pixel region and a sensing region, comprising:

• a first substrate, comprising a pixel array and at least a photo-voltaic cell device disposed on the first substrate, the pixel array being disposed in the pixel region and comprising a plurality of thin film transistors and a plurality of pixel electrodes electrically connected to the plurality of thin film transistors, the at least a photo-voltaic cell device being disposed in the sensing region and comprising:
• a first electrode;
• a first silicon-rich dielectric layer, disposed on the first electrode, wherein the first silicon-rich dielectric layer is doped with a first-type ion;
• a second silicon-rich dielectric layer, disposed on the first silicon-rich dielectric layer, wherein the second silicon-rich dielectric layer is doped with a second-type ion;
• a second electrode, disposed on the second silicon-rich dielectric layer;
• a second substrate, disposed opposite to the first substrate;
• and
• a display medium, sandwiched between the first substrate and the second substrate.

A photo-voltaic cell device, comprising:

• a first electrode;
• a second electrode;
• an N-type doped silicon-rich dielectric layer, disposed between the first electrode and the second electrode, wherein the N-type doped silicon-rich dielectric layer is doped with an N-type dopant;
• and
• a P-type doped silicon-rich dielectric layer, disposed between the N-type doped silicon-rich dielectric layer and the second electrode, wherein the P-type doped silicon-rich dielectric layer is doped with a P-type dopant.

A method of fabricating a photo-voltaic cell device, comprising:

• forming a first electrode;
• forming a second electrode;
• forming an N-type doped silicon-rich dielectric layer, disposed between the first electrode and the second electrode, wherein the N-type doped silicon-rich dielectric layer is doped with an N-type dopant;
• and
• forming a P-type doped silicon-rich dielectric layer, disposed between the N-type doped silicon-rich dielectric layer and the second electrode, wherein the P-type doped silicon-rich dielectric layer is doped with a P-type dopant.