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US 2010/0163872 A1Published application
Bipolar Junction Transistor and Method of Manufacturing the Same
AssigneeDongbu HiTek Co., Ltd.
InventorHyon Chol LIM
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Abstract
A bipolar junction transistor and a method of manufacturing a bipolar junction transistor are disclosed. An exemplary bipolar junction transistor includes a second conductivity type base region in a first conductivity type substrate, step-shaped recesses in the base region, a polysilicon layer doped with a first conductivity type impurity in the step-shaped recesses, and a step-shaped emitter region between the polysilicon layer and the base region.
Claims20
A bipolar junction transistor comprising:
- a second conductivity type base region in a first conductivity type substrate;
- step-shaped recesses in the base region;
- a polysilicon layer doped with an impurity of the first conductivity type in the step-shaped recesses;
- and
- a step-shaped emitter region between the polysilicon layer and the base region.
2 more elements
A method of manufacturing a bipolar junction transistor comprising:
- implanting an impurity into a first conductivity type substrate to form a base region, the impurity and the base region having a second conductivity type;
- etching the substrate in the base region to form step-shaped recesses;
- forming a polysilicon layer doped with an impurity of the first conductivity type in the step-shaped recesses;
- and
- forming a step-shaped emitter adjacent to the polysilicon layer by diffusing the impurity from the polysilicon layer into the substrate.
2 more elements
Dependencies are inferred from the claim text.