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US 2010/0163867 A1Published application
Semiconductor device, method for manufacturing the same, and electronic device having the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei YAMAZAKI, Junichiro SAKATA
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Abstract
In a thin film transistor including an oxide semiconductor, an oxide cluster having higher electrical conductance than the oxide semiconductor layer is formed between the oxide semiconductor layer and a gate insulating layer, whereby field effect mobility of the thin film transistor can be increased and increase of off current can be suppressed.
Claims26
A semiconductor device comprising:
- a gate electrode layer;
- a gate insulating layer over the gate electrode layer;
- a plurality of oxide clusters over the gate insulating layer;
- an oxide semiconductor layer over the gate insulating layer and the plurality of oxide clusters;
- and
- source and drain electrode layers over the oxide semiconductor layer,
- wherein the plurality of oxide clusters have electrical conductivity,
- wherein the oxide semiconductor layer and the source electrode layer are electrically connected to each other, and
- wherein the oxide semiconductor layer and the drain electrode layer are electrically connected to each other.
6 more elements
A semiconductor device comprising:
- a gate electrode layer;
- a gate insulating layer over the gate electrode layer;
- a plurality of oxide clusters over the gate insulating layer;
- an oxide semiconductor layer over the gate insulating layer and the plurality of oxide clusters;
- a buffer layer having n-type electrical conductivity over the oxide semiconductor layer;
- and
- source and drain electrode layers over the buffer layer,
- wherein the plurality of oxide clusters have electrical conductivity,
- wherein a carrier concentration of the buffer layer is higher than a carrier concentration of the oxide semiconductor layer,
- wherein the oxide semiconductor layer and the source electrode layer are electrically connected to each other with the buffer layer interposed therebetween, and
- wherein the oxide semiconductor layer and the drain electrode layer are electrically connected to each other with the buffer layer interposed therebetween.
8 more elements
A method for manufacturing a semiconductor device comprising:
- forming a gate electrode layer over a substrate;
- forming a gate insulating layer over the gate electrode layer;
- forming a plurality of oxide clusters having electrical conductivity over the gate insulating layer in a dispersed manner;
- forming an oxide semiconductor film over the gate insulating layer and the plurality of oxide clusters by a sputtering method;
- forming an island-like second oxide semiconductor film with an etching method of the oxide semiconductor film;
- forming a conductive layer over the island-like second oxide semiconductor film;
- and
- forming an oxide semiconductor layer and source and drain electrode layers with an etching method of the island-like second oxide semiconductor film and the conductive layer.
5 more elements
Dependencies are inferred from the claim text.