Display device and manufacturing method thereof

A display device comprising:

• a gate electrode formed over a substrate;
• a gate insulating film formed over the gate electrode;
• a high-resistance oxide semiconductor layer formed in an island shape over the gate insulating film;
• and
• a wiring and an electrode layer provided over the gate insulating film and the high-resistance oxide semiconductor layer,
• wherein the wiring comprises a first low-resistance oxide semiconductor layer and a first conductive layer over the first low-resistance oxide semiconductor layer, and
• wherein the electrode layer comprises a second low-resistance oxide semiconductor layer and a second conductive layer covering a first portion of the second low-resistance oxide semiconductor layer,
• wherein a second portion of the second low-resistance oxide semiconductor layer is arranged to function as a pixel electrode.

A display device comprising:

• a wiring and an electrode layer over a substrate;
• a high-resistance oxide semiconductor layer formed between the wiring and the electrode layer over the substrate;
• a gate insulating film formed over the high-resistance oxide semiconductor layer;
• and
• a gate electrode formed over the gate insulating film,
• wherein the wiring comprises a first low-resistance oxide semiconductor layer and a first conductive layer over the first low-resistance oxide semiconductor layer, and
• wherein the electrode layer comprises a second low-resistance oxide semiconductor layer and a second conductive layer covering a first portion of the second low-resistance oxide semiconductor layer,
• wherein a second portion of the second low-resistance oxide semiconductor layer is arranged to function as a pixel electrode.

A display device comprising:

• a high-resistance oxide semiconductor layer formed in an island shape over a substrate;
• a wiring and an electrode layer over the substrate and the high-resistance oxide semiconductor layer;
• a gate insulating film formed over the high-resistance oxide semiconductor layer;
• and
• a gate electrode formed over the gate insulating film,
• wherein the wiring comprises a first low-resistance oxide semiconductor layer and a first conductive layer over the first low-resistance oxide semiconductor layer, and
• wherein the electrode layer comprises a second low-resistance oxide semiconductor layer and a second conductive layer covering a first portion of the second low-resistance oxide semiconductor layer,
• wherein a second portion of the second low-resistance oxide semiconductor layer is arranged to function as a pixel electrode.

A method of manufacturing a display device, comprising the steps of:

• forming a gate electrode over a substrate;
• forming a gate insulating film over the gate electrode;
• forming a wiring and an electrode layer over the gate insulating film by stacking a low-resistance oxide semiconductor layer and a conductive layer over the low-resistance oxide semiconductor layer;
• and
• forming a high-resistance oxide semiconductor layer between the wiring and the electrode layer over the gate insulating film,
• wherein a region of the conductive layer which corresponds to a region of the electrode layer functioning as a pixel electrode is etched, so that the low-resistance oxide semiconductor layer is exposed.

A method of manufacturing a display device, comprising the steps of:

• forming a gate electrode over a substrate;
• forming a gate insulating film over the gate electrode;
• forming a high-resistance oxide semiconductor layer so as to have an island shape over the gate insulating film;
• and
• forming a wiring and an electrode layer over the gate insulating film and the high-resistance oxide semiconductor layer by stacking a low-resistance oxide semiconductor layer and a conductive layer over the low-resistance oxide semiconductor layer,
• wherein a region of the conductive layer which corresponds to a region of the electrode layer functioning as a pixel electrode is etched, so that the low-resistance oxide semiconductor layer is exposed.

A method of manufacturing a display device, comprising the steps of:

• forming a wiring and an electrode layer over a substrate by stacking a low-resistance oxide semiconductor layer and a conductive layer over the low-resistance oxide semiconductor layer;
• forming a high-resistance oxide semiconductor layer between the wiring and the electrode layer over the substrate;
• forming a gate insulating film over the high-resistance oxide semiconductor layer;
• and
• forming a gate electrode over the gate insulating film,
• wherein a region of the conductive layer which corresponds to a region of the electrode layer functioning as a pixel electrode is etched, so that the low-resistance oxide semiconductor layer is exposed.

A method of manufacturing a display device, comprising the steps of:

• forming a high-resistance oxide semiconductor layer so as to have an island shape over a substrate;
• forming a wiring and an electrode layer over the substrate and the high-resistance oxide semiconductor layer by stacking a low-resistance oxide semiconductor layer and a conductive layer over the low-resistance oxide semiconductor layer;
• forming a gate insulating film over the high-resistance oxide semiconductor layer;
• and
• forming a gate electrode over the gate insulating film,
• wherein a region of the conductive layer which corresponds to a region of the electrode layer functioning as a pixel electrode is etched, so that the low-resistance oxide semiconductor layer is exposed.