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US 2010/0163858 A1Published application
Switching element and method for manufacturing the same
AssigneeNEC Corporation
InventorsSatoru Toguchi, Hideaki Numata, Hiroyuki Endoh
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AssigneeNEC Corporation
InventorsSatoru Toguchi, Hideaki Numata, Hiroyuki Endoh
Estimating the term…
A problem of a switching element using for the active layer a carbon nanotube (CNT) dispersion film that can be manufactured at low temperature has been that sufficient electrical contact and thermal conductivity between the CNTs and the source and drain electrode surfaces are not obtained. The switching element of the present invention has a structure in which a mixed layer of carbon nanotubes and a metal material, and a metal layer of the metal material are laminated in this order on source and drain electrodes, and thereby, the CNT-dispersed film and the electrode surfaces can be in firm electrical, mechanical, and thermal contact with each other. Thus, a switching element exhibiting good and stable transistor characteristics is obtained with a low-temperature, convenient, and low-cost process.
A switching element comprising a source electrode and a drain electrode spaced from each other, an active layer in contact with both the source electrode and the drain electrode, and further a gate electrode spaced from the source/drain electrodes and being in contact with the active layer via a gate insulating layer,
Dependencies are inferred from the claim text.