Thin film transistor and method of fabricating the same

An array substrate for a flat panel display device, comprising:

• a silicon nanowire on a substrate, the silicon nanowire having a central portion and respective side portions of the central portion;
• a fixing layer on the central portion of the silicon nanowire and the substrate, the fixing layer fixing the silicon nanowire to the substrate;
• a gate insulating layer on the fixing layer;
• a gate electrode on the gate insulating layer;
• a first source electrode and a first drain electrode spaced apart from the first source electrode on respective side portions, the first source electrode and the first drain electrode electrically connected to the silicon nanowire;
• a second source electrode connected to the first source electrode and a second drain electrode connected to the first drain electrode;
• and
• a pixel electrode connected to the second drain electrode.

An array substrate for a flat panel display device, comprising:

• a silicon nanowire on a substrate, the silicon nanowire having a central portion and respective side portions of the central portion;
• a fixing layer on the central portion of the silicon nanowire and the substrate, the fixing layer fixing the silicon nanowire to the substrate;
• a gate insulating layer on the fixing layer;
• a gate electrode on the gate insulating layer;
• a first source electrode and a first drain electrode spaced apart from the first source electrode on respective side portions, the first source and first drain electrodes directly contacting the silicon nanowire;
• a second source electrode connected to the first source electrode and a second drain electrode connected to the first drain electrode;
• and
• a pixel electrode connected to the second drain electrode.

A method of fabricating a thin film transistor, comprising:

• disposing a silicon nanowire on a substrate, the silicon nanowire having a central portion and respective side portions of the central portion;
• forming a gate electrode on the central portion;
• and
• forming a source electrode and a drain electrode spaced apart from the source electrode on the respective side portions, the source electrode and the drain electrode electrically connected to the silicon nanowire.

A method of fabricating a thin film transistor, comprising:

• coating a solvent including a silicon nanowire on a substrate, the silicon nanowire having a central portion and respective side portions of the central portion;
• removing the solvent from the substrate except the silicon nanowire;
• sequentially forming a gate insulating layer and a gate electrode on the central portion;
• and
• forming a source electrode and a drain electrode spaced apart from the source electrode on respective side portions, the source and drain electrodes directly contacting the silicon nanowire.