Fabrication method of electronic devices based on aligned high aspect ratio nanoparticle networks

A base plate for forming an electronic device structure thereon, comprising:

• a substrate;
• and
• a layer of high aspect ratio nanoparticles disposed on at least one surface of the substrate;
• wherein the high aspect ratio nanoparticles on the substrate are at least partially aligned, and
• wherein the layer of the high aspect ratio nanoparticles is disposed on the substrate by a process that comprises:
• providing an aerosol suspension of the high aspect ratio nanoparticles;
• and
• disposing the layer of the high aspect ratio nanoparticles on a surface of the substrate under the influence of an electrical field applied on the substrate.

An electronic device structure, comprising;

• a first conductive terminal and a second conductive terminal, both disposed on a surface of a substrate and separated from each other by a distance;
• and
• a plurality of high aspect ratio nanoparticles connecting the first and the second conductive terminals across the distance;
• wherein the high aspect ratio nanoparticles are at least partially aligned, and
• wherein the high aspect ratio nanoparticles are disposed on the substrate by a process that comprises:
• providing an aerosol suspension of the high aspect ratio nanoparticles, and
• disposing the layer of the high aspect ratio nanoparticles on the substrate under the influence of an electrical field applied on the substrate.