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US 2010/0163840 A1Published application
Nitride nanowires and method of producing such
AssigneeQuNano AB
InventorsWerner Seifert, Damir Asoli, Zhaoxia Bi
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AssigneeQuNano AB
InventorsWerner Seifert, Damir Asoli, Zhaoxia Bi
Estimating the term…
The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.
A method of growing nitride based semiconductor nanowires utilising a CVD based selective area growth technique, wherein a nitrogen source and a metal-organic source is present during a nanowire growth step, the method characterized in that the nitrogen source flow rate is continuous during the nanowire growth step.
A nanowire (110) of a nitride semiconductor, the nanowire epitaxially connected and upstanding from a substrate (105), characterized in that the nanowire (110) has the same crystal structure through its entire length.
A semiconductor device comprising a plurality of nanowires (105), the nanowires epitaxially connected and upstanding from a substrate (105), characterized in that at least a majority of the nanowires each has the same crystal structure through their respective entire length.
Dependencies are inferred from the claim text.