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US 2010/0163836 A1Published application
Low-volume phase-change material memory cell
OwnerDaniel R. Shepardinventor
Life of this patent
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Abstract
A memory device includes a memory array comprising a plurality of storage locations disposed above a plurality of generally parallel lines, where each storage location comprises a programmable material disposed on a sidewall of a conductive element.
Claims19
A memory device comprising:
- a memory array comprising a plurality of storage locations disposed above a plurality of generally parallel lines,
- wherein each storage location comprises a programmable material disposed on a sidewall of a conductive element.
A method of forming a memory element, the method comprising:
- providing a substrate having a memory cell contact thereon;
- forming a conductive element over only a portion of the memory cell contact, thereby leaving exposed an area of the memory cell contact;
- and
- electrically connecting the memory cell contact and the conductive element by forming a programmable material over at least the exposed area of the memory cell contact.
1 more element
A method of forming a memory element, the method comprising:
- providing a substrate having a memory cell contact thereon;
- forming, over the substrate, a conductive element having at least one sidewall;
- and
- forming a programmable material on at least the at least one sidewall.
1 more element
Dependencies are inferred from the claim text.