Electrical fuse device based on a phase-change memory element and corresponding programming method

A one-time-programmable storage device, comprising:

• a plurality of fuse devices, each fuse device including:
• a fuse element having a first terminal, a second terminal and an electrically breakable region, the electrically breakable region being arranged between said first and second terminals, being configured to undergo breaking as a result of the supply of a programming electrical quantity, and comprising phase-change material;
• a semiconductor region;
• a selector element in said semiconductor region, said selector element being electrically connected to said fuse element and configured to enable the supply of said programming electrical quantity to said fuse element;
• and
• a conductive ring in said semiconductor region and around said selector element.

A method of making a fuse device, comprising:

• forming a fuse element having a first terminal, a second terminal and an electrically breakable region, the electrically breakable region being arranged between said first and second terminals, being configured to undergo breaking as a result of a supply of a programming electrical quantity, and comprising phase-change material;
• forming a semiconductor region;
• forming a selector element in said semiconductor region, said selector element being electrically coupled to said fuse element and configured to enable the supply of said programming electrical quantity to said fuse element;
• and
• forming a conductive ring in said semiconductor region and around said selector element.