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US 2010/0163832 A1Published application
Self-aligned nano-cross-point phase change memory
AssigneeSTMicroelectronics S.r.I.
InventorDerChang Kau
Life of this patent
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Abstract
One embodiment is a phase change memory that includes a heater element transversely contacting a storage element of phase change material. In particular, an end of the storage element contacts an end of the heater element. A first pair of dielectric spacers is positioned on opposite sides of the first heater element and a second pair of dielectric spacers is positioned on opposite sides of the first storage element. The storage element, heater element, and first and second pairs of dielectric spacers can be made by a spacer patterning technique.
Claims26
A phase change memory, comprising:
- a first heater element having first and second ends;
- a first pair of dielectric spacers positioned on opposite sides of the first heater element, the first pair of dielectric spacers being of a first dielectric material;
- a first storage element of phase change material having first and second ends, the first end of the storage element contacting the second end of the heater element;
- and
- a second pair of dielectric spacers positioned on opposite sides of the first storage element.
2 more elements
A system, comprising:
- a processor;
- a phase change memory coupled to the processor, the phase change memory including:
- a first heater element having first and second ends;
- a first pair of dielectric spacers positioned on opposite sides of the first heater element, the first pair of dielectric spacers being of a first dielectric material;
- a first storage element of phase change material having first and second ends, the first end of the storage element contacting the second end of the heater element;
- and
- a second pair of dielectric spacers positioned on opposite sides of the first storage element.
4 more elements
A method, comprising:
- forming a phase change memory, the forming including:
- forming a first heater element having first and second ends;
- forming a first pair of dielectric spacers positioned on opposite sides of the first heater element, the first pair of dielectric spacers being of a first dielectric material;
- forming a first storage element of phase change material having first and second ends, the first end of the storage element contacting the second end of the heater element;
- and
- forming a second pair of dielectric spacers positioned on opposite sides of the first storage element.
3 more elements
Dependencies are inferred from the claim text.