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US 2010/0163824 A1Published application
Modulation of resistivity in carbon-based read-writeable materials
AssigneeSanDisk 3D LLC
InventorsHuiwen Xu, Xiying Chen, Er-Xuan Ping
Life of this patent
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Abstract
In a first aspect, a method of forming a memory cell is provided that includes (1) forming a metal-insulator-metal (“MIM”) stack above a substrate, the MIM stack including a carbon-based switching material having a resistivity of at least 1×104 ohm-cm; and (2) forming a steering element coupled to the MIM stack. Numerous other aspects are provided.
Claims36
A method of forming a memory cell, the method comprising:
- forming a metal-insulator-metal (“MIM”) stack above a substrate, the MIM stack including a carbon-based switching material having a resistivity of at least 1×104 ohm-cm;
- and
- forming a steering element coupled to the MIM stack.
A method of forming a memory cell, the method comprising:
- forming a first conducting layer above a substrate;
- forming a steering element above the first conducting layer;
- forming a carbon-based switching material above the first conducting layer, the carbon-based switching material having a resistivity of at least 1×104 ohm-cm;
- and
- forming a second conducting layer above the carbon-based switching material and the steering element.
2 more elements
A memory cell comprising:
- a metal-insulator-metal (“MIM”) stack, the MIM stack including a carbon-based switching material having a resistivity of at least 1×104 ohm-cm;
- and
- a steering element coupled to the MIM stack.
A memory cell comprising:
- a first conducting layer;
- a steering element above the first conducting layer;
- a carbon-based switching material above the first conducting layer, the carbon-based switching material having a resistivity of at least 1×104 ohm-cm;
- and
- a second conducting layer above the carbon-based switching material and the steering element.
2 more elements
Dependencies are inferred from the claim text.