Resistive memory device and method for fabricating the same
OwnerYun-Taek Hwanginventor
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Abstract
A resistive memory device and a fabrication method thereof are provided. The fabrication method includes: providing a substrate; forming a lower electrode over the substrate; forming a variable resistive material layer over the lower electrode; forming an ion implantation region to a predetermined depth from a surface of the variable resistive material layer by implanting metal ions or oxygen ions to the surface of the variable resistive material layer; and forming an upper electrode over the variable resistive material layer including the ion implantation region.
Claims15
A method for fabricating a resistive memory device, comprising:
- providing a substrate;
- forming a lower electrode over the substrate;
- forming a variable resistive material layer over the lower electrode;
- forming an ion implantation region to a predetermined depth from a surface of the variable resistive material layer by implanting metal ions or oxygen ions to the surface of the variable resistive material layer;
- and
- forming an upper electrode over the variable resistive material layer including the ion implantation region.
A resistive memory device, comprising:
- a substrate;
- a lower electrode over the substrate;
- a variable resistive material layer disposed over the lower electrode and having an ion implantation region where oxygen ions or metal ions are implanted to a predetermined depth from a surface of the variable resistive material layer;
- and
- an upper electrode over the variable resistive material layer.
A method for fabricating a resistive memory device, comprising:
- providing a substrate;
- forming a lower electrode over the substrate;
- forming a variable resistive material layer over the lower electrode;
- forming an ion implantation region to a predetermined depth from a surface of the variable resistive material layer by implanting metal ions or oxygen ions to the surface of the variable resistive material layer, wherein the ion implantation region has a lower oxygen or metal vacancy than a region of the variable resistive material layer below the ion-implantation region;
- and
- forming an upper electrode over the variable resistive material layer including the ion implantation region.
Dependencies are inferred from the claim text.