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US 2010/0163818 A1Published application
Forming a carbon passivated ovonic threshold switch
AssigneeSTMicroelectronics S.r.l.
InventorsJinwook Lee, Kuo-wei Chang, Jason S. Reid, Wim Y. Deweerd, Aleshandre M. Diaz
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Abstract
By making an ovonic threshold switch using a carbon interfacial layer having a thickness of less than or equal to ten percent of the thickness of the associated electrode, cycle endurance may be improved. In some embodiments, a glue layer may be used between the carbon and the chalcogenide of the ovonic threshold switch. The glue layer may be effective to improve adherence between carbon and chalcogenide.
Claims26
An ovonic threshold switch comprising:
- a first electrode having a thickness;
- an ovonic threshold switching material;
- a first carbon layer between said first electrode and said ovonic threshold switch material, said first carbon layer having a thickness of less than ten percent of the thickness of said first electrode.
A method comprising:
- forming an ovonic threshold switch, including:
- forming a first electrode having a thickness;
- forming ovonic threshold switching material;
- and
- forming a first carbon layer between said first electrode and said ovonic threshold switching material such that said first carbon layer has a thickness of less than or equal to ten percent of the thickness of said first electrode.
2 more elements
A system comprising:
- a processor;
- and
- an ovonic threshold switch coupled to said processor, said ovonic threshold switch including a first electrode, a ovonic threshold switching material, and a first carbon layer between said first electrode said ovonic threshold switching material, said first carbon layer having a thickness of less than ten percent of a thickness of said first electrode.
Dependencies are inferred from the claim text.