Silicon Wafer and Method Of Manufacturing The Same
AssigneeSiltronic AG
InventorsMasayuki Fukuda, Katsuhiko Nakai
Life of this patent
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Abstract
A silicon wafer in which both occurrences of slip dislocation and warpage are suppressed in device manufacturing processes is a silicon wafer having BMDs having an octahedral shape, wherein BMDs located at a position below the silicon wafer surface to a depth of 20 μm and having a diagonal length of 200 nm or more are present at a concentration of ≦2×109/cm3, and BMDs located at a position below a depth ≧50 μm have a diagonal length of ≧10 nm to ≦50 nm and a concentration of ≧1×1012/cm3.
Claims3
A silicon wafer containing BMDs having an octahedral shape, wherein BMDs located at a position below the silicon wafer surface by a depth of 20 μm or less and having a diagonal length of 200 nm or more are present in a concentration of ≦2×109/cm3, and BMDs located at a depth of more than 50 μm and having a diagonal length of ≧10 nm to ≦50 nm are present in a concentration of ≧1×1012/cm3.
Dependencies are inferred from the claim text.