Polishing Composition for Planarizing Metal Layer
AssigneeUWIZ Technology Co., Ltd.
InventorsSong-Yuan CHANG, Ming-Che Ho, Ming-hui Lu
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Abstract
A polishing composition of the present invention at least comprises about 750 ppm to less than 5000 ppm by weight of abrasive particles, hydrogen peroxide, an accelerator, a dual-corrosion inhibitor and water, wherein the dual-corrosion inhibitor contains a first and a second corrosion inhibitor. The dual-corrosion inhibitor is applied to the planarization of metal layers so as to maintain a high removal rate of metal layers as well as suppress etching of the metal, thus capable of reducing polishing defects such as dishing, erosion and the like.
Claims12
A polishing composition for planarizing a metal layer at least comprising:
- about 750 ppm to less than 5000 ppm by weight of abrasive particles;
- hydrogen peroxide;
- an accelerator;
- a dual-corrosion inhibitor containing a first and a second corrosion inhibitor;
- and
- water.
Dependencies are inferred from the claim text.