Silicon Drift X-Ray Detector
AssigneeJEOL Ltd.
InventorsToshiyoshi WATANABE, Kouji Miyatake
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Abstract
A silicon drift detector has an X-ray detection device, an electrode terminal subassembly for electrical connection, a Peltier device, and first and second shields formed between the electrode terminal subassembly and the Peltier device. The first shield is made of a material consisting chiefly of an element having an atomic number smaller than the average atomic numbers of the elements included in the material of the Peltier device. The second shield is made of a material consisting chiefly of an element having an atomic number greater than the atomic numbers of the elements included in the material of the Peltier device
Claims16
A silicon drift X-ray detector for use in an energy-dispersive X-ray spectrometer mounted in an X-ray analyzer that analyzes a sample by irradiating the sample with an electron beam or electromagnetic waves and spectrally detecting characteristic X-rays emanating from the sample, said silicon drift X-ray detector comprising:
- an X-ray detection device consisting of a solid-state semiconductor for detecting X-rays;
- an electrode terminal subassembly mounted to the X-ray detection device and having connector terminals for electrically connecting the X-ray detection device with an external circuit;
- and
- a Peltier device in thermal contact with the X-ray detection device via the electrode terminal subassembly to cool the X-ray detection device,
- wherein a first shield made of a material consisting mainly of a chemical element having an atomic number smaller than an average atomic number of chemical elements included in a material of the Peltier device is mounted between the X-ray detection device and the Peltier device, and
- wherein a dose of X-rays reaching the Peltier device after being transmitted through the X-ray detection device is reduced by the first shield.
A silicon drift X-ray detector for use in an energy-dispersive X-ray spectrometer mounted in an electron beam apparatus that analyzes a sample by irradiating the sample with an electron beam and spectrally detecting characteristic X-rays emanating from the sample, said silicon drift X-ray detector comprising:
- an X-ray detection device consisting of a solid-state semiconductor for detecting X-rays;
- an electrode terminal subassembly mounted to the X-ray detection device and having connector terminals for electrically connecting the X-ray detection device with an external circuit;
- and
- a Peltier device in thermal contact with the X-ray detection device via the electrode terminal subassembly to cool the X-ray detection device,
- wherein a thermal conductor is mounted between the electrode terminal subassembly and the Peltier device, and
- wherein the thermal conductor has a length determined based on a distance necessary to keep the Peltier device away from the X-ray detection device such that a magnetic field produced by the Peltier device does not affect an electron beam used in the electron beam apparatus.
Dependencies are inferred from the claim text.