Sensor comprising at least a vertical double junction photodiode, being integrated on a semiconductor substrate and corresponding integration process

An integration process of a sensor in a multilayer structure comprising a semiconductor substrate and an alternate structure of intermetal dielectric layers, of the type comprising the steps of:

• forming in said semiconductor substrate at least one first and one second pn junction, suitable to form at least one vertical double-junction photodiode;
• removing said intermetal dielectric layers in correspondence with at least one opening suitable to expose a surface of said semiconductor substrate in correspondence with said double junction,
• depositing a first anti-reflection dielectric layer covering at least said surface;
• and
• depositing on said first anti-reflection dielectric layer a second anti-reflection dielectric layer to form a double-layer anti-reflection coating suitable to obtain for the photodiode a responsivity peak in correspondence with a predetermined wavelength of an optical signal being incident on said sensor.

An electronic device, comprising:

• a first p-n junction;
• a second p-n junction;
• a first antireflective layer disposed over the first and second junctions;
• and
• a second antireflective layer disposed over the first antireflective layer.

An integrated circuit, comprising:

• a first p-n junction;
• a second p-n junction;
• a first antireflective coating disposed over the first and second junctions;
• and
• a second antireflective coating disposed over the first antireflective coating.

A system, comprising:

• a first integrated circuit including at least one photodiode each including
• a first p-n junction;
• a second p-n junction;
• a first antireflective coating disposed over the first and second junctions;
• and
• a second antireflective coating disposed over the first antireflective coating;
• and
• a second integrated circuit coupled to the first integrated circuit.

A method, comprising:

• receiving a wavelength of electromagnetic radiation through a first material having a first thickness approximately equal to one fourth of the wavelength and through a second material having a second thickness approximately equal to one half of the wavelength;
• and
• generating a first current across a first p-n junction in response to the received wavelength;
• and
• generating a second current across a second p-n junction in response to the received wavelength.