Substrate processing method and storage medium
AssigneeTokyo Electron Limited
InventorsSungtae LEE, Masahiro Ogasawara, Masahiro Ito
Life of this patent
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Abstract
Disclosed is a substrate processing method of etching a substrate including a target layer, and a mask layer and an intermediate layer that are stacked on the target layer, to form a pattern on the target layer via the intermediate layer and the mask layer. The intermediate layer is etched under a processing pressure of 100 mTorr (1.33×10 Pa) to 150 mTorr (2.0×10 Pa) by using as a processing gas a mixture gas of CF4, CHF3, and C4F8, and the mask layer is etched by using a COS-containing gas as a processing gas.
Claims29
A substrate processing method of etching a substrate including a target layer, and a mask layer and an intermediate layer that are stacked on the target layer, to form a pattern on the target layer via the intermediate layer and the mask layer, the method comprising:
- etching the intermediate layer under a processing pressure of about 100 mTorr (1.33×10 Pa) to 150 mTorr (2.0×10 Pa) by using as a processing gas a mixture gas of CF4 gas, CHF3 gas, and C4F6 gas;
- and
- etching the mask layer by using a COS-containing gas as a processing gas.
A substrate processing method of etching a substrate including a target layer, and a mask layer and an intermediate layer that are stacked on the target layer, to form a pattern on the target layer via the intermediate layer and the mask layer, the method comprising:
- etching the target layer by using a C6F6-containing gas as a processing gas.
A substrate processing method of etching a substrate including a target layer, and a mask layer and an intermediate layer that are stacked on the target layer, to form a pattern on the target layer via the intermediate layer and the mask layer, the method comprising:
- etching the target layer, said etching including:
- a primary etching using a C4F6-containing gas as a processing gas, and
- a secondary etching using a mixture gas of the C4F6-containing gas and a COS gas.
A substrate processing method of etching a substrate including a target layer, and a mask layer and an intermediate layer that are stacked on the target layer, to form a pattern on the target layer via the intermediate layer and the mask layer, the method comprising:
- etching the intermediate layer under a processing pressure of about 100 mTorr (1.33×10 Pa) to 150 mTorr (2.0×10 Pa) by using as a processing gas a mixture gas of CF4 gas, CHF3 gas, and C4F8 gas;
- etching the mask layer by using a COS-containing gas as a processing gas;
- and
- etching the target layer by using a C6F6-containing gas as a processing gas.
A substrate processing method of etching a substrate including a target layer, and a mask layer and an intermediate layer that are stacked on the target layer, to form a pattern on the target layer via the intermediate layer and the mask layer, the method comprising:
- etching the intermediate layer under a processing pressure of about 100 mTorr (1.33×10 Pa) to 150 mTorr (2.0×10 Pa) by using as a processing gas a mixture gas of CF4, CHF3, and C4F8;
- etching the mask layer by using a COS-containing gas as a processing gas;
- and
- etching the target layer, which includes:
- a primary etching using a C4F6-containing gas as a processing gas, and
- a secondary etching using a mixture gas of the C4F6-containing gas and a COS gas.
A storage medium storing a program for executing on a computer a substrate processing method of etching a substrate including a target layer, and a mask layer and an intermediate layer that are stacked on the target layer, to form a pattern on the target layer via the intermediate layer and the mask layer, the substrate processing method comprising:
- etching the intermediate layer under a processing pressure of about 100 mTorr (1.33×10 Pa) to 150 mTorr (2.0×10 Pa) by using as a processing gas a mixture gas of CF4 gas, CHF3 gas, and C4F8 gas;
- etching the mask layer by using a COS-containing gas as a processing gas;
- and
- etching the target layer by using a C6F6-containing gas as a processing gas.
A storage medium storing a program for executing on a computer a substrate processing method of etching a substrate including a target layer, and a mask layer and an intermediate layer that are stacked on the target layer, to form a pattern on the target layer via the intermediate layer and the mask layer, the substrate processing method comprising:
- etching the intermediate layer under a processing pressure of about 100 mTorr (1.33×10 Pa) to 150 mTorr (2.0×10 Pa) by using as a processing gas a mixture gas of CF4 gas, CHF3 gas, and C4F8 gas;
- etching the mask layer by using a COS-containing gas as a processing gas;
- and
- etching the target layer, which includes:
- a primary etching using a C4F6-containing gas as a processing gas, and
- a secondary etching using a mixture gas of the C4F6-containing gas and a COS gas.
Dependencies are inferred from the claim text.