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US 2010/0163294 A1Published application
Method for forming metal line of semiconductor device
OwnerChung-Kyung Junginventor
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Abstract
A method of forming a metal line of a semiconductor device, and devices thereof. A method of forming a metal line of a semiconductor device may include forming a multi-layer structure over a substrate, forming a photoresist pattern over a multi-layer structure, forming a metal line by selectively etching a multi-layer structure using a photoresist pattern as an etching mask, removing an electron over a surface of a metal line by processing a surface of a metal line, and/or cleaning a metal line.
Claims20
A method comprising:
- forming a multi-layer structure over a substrate;
- forming a photoresist pattern over said multi-layer structure;
- forming a metal line by selectively etching said multi-layer structure using said photoresist pattern as an etching mask;
- removing an electron over a surface of said metal line by processing the surface of said metal line;
- and
- cleaning said metal line.
3 more elements
An apparatus comprising:
- a metal line formed by selectively etching a multi-layer structure over a substrate using a photoresist pattern as an etching mask,
- said metal line comprising a removed electron over a surface of said metal line formed by processing the surface of said metal line;
- and
- said metal line comprising a cleaned metal line.
1 more element
Dependencies are inferred from the claim text.