Plasma processing apparatus

A plasma processing apparatus for processing a surface of a to-be-processed substrate comprising:

• a processing chamber;
• a first electrode provided in said processing chamber;
• a second electrode arranged in opposition to said first electrode;
• a main power source for supplying said first or second electrode with power for generating a plasma;
• a biasing power source for supplying said second or first electrode with biasing power;
• a gas supplying unit for supplying a processing gas into said processing chamber;
• and
• a control unit for controlling said main power source, said biasing power source and said gas supplying unit, wherein
• said control unit performs a control such that, in a time of transition from a first state of plasma to a plasma quenching, a second state of plasma is created in which outputs of said main power source and said biasing power source are smaller than those in said first state of plasma, a plasma processing being carried out in said first state of plasma, and in said first state of plasma and during said time of transition including said second state of plasma, the output of said main power source is kept not larger than the output of said biasing power source.

A plasma processing apparatus for processing a surface of a to-be-processed substrate comprising:

• a processing chamber;
• a first electrode provided in said processing chamber;
• a second electrode arranged in opposition to said first electrode;
• a main power source for supplying said first or second electrode with power for generating a plasma;
• a biasing power source for supplying said second or first electrode with biasing power;
• a gas supplying unit for supplying a processing gas into said processing chamber;
• and
• a control unit for controlling said main power source, said biasing power source and said gas supplying unit, wherein
• said control unit performs a control such that, for a plasma ignition, a second state of plasma is created in which outputs of the main power source and the biasing power source are smaller than those in a stationary state of plasma, a plasma processing being carried out in said stationary state of plasma, said creation of the second state of plasma being effected under conditions such that an output of said main power source is not larger than that of said biasing power source, and said stationary state of plasma is created from said second state of plasma.