Thermoelectric device and fabrication method thereof, chip stack structure, and chip package structure

A chip package structure, comprising:

• a carrier substrate;
• a thermoelectric device, disposed on the carrier substrate, wherein the thermoelectric device comprises:
• a first substrate, having a first surface and a second surface opposite to the first surface;
• a plurality of conductive vias, running through the first substrate and respectively connecting the first surface and the second surface;
• a second substrate, disposed opposite to the first substrate, wherein the second surface of the first substrate faces the second substrate;
• a thermoelectric couple module, including a plurality of thermoelectric couples connected with each other in series, disposed between the first substrate and the second substrate and coupled to the conductive vias;
• a first insulation layer, disposed between the thermoelectric couple module and the first substrate;
• a second insulation layer, disposed between the thermoelectric couple module and the second substrate;
• and
• a chip, disposed between the thermoelectric device and the carrier substrate, wherein the chip and the thermoelectric device are respectively coupled to the carrier substrate;
• and
• a heat sink disposed on the second substrate.

A chip stack structure, comprising:

• a plurality of chips, stacked together;
• a thermoelectric device, disposed between any adjacent two of the chips, the thermoelectric device comprising:
• a first substrate, having a first surface and a second surface opposite to the first surface;
• a plurality of conductive vias, running through the first substrate and respectively connecting the first surface and the second surface;
• a second substrate, disposed opposite to the first substrate, wherein the second surface of the first substrate faces the second substrate;
• a thermoelectric couple module, including a plurality of thermoelectric couples connected with each other in series, disposed between the first substrate and the second substrate and coupled to the adjacent chip through the conductive vias;
• a first insulation layer, disposed between the thermoelectric couple module and the first substrate;
• and
• a second insulation layer, disposed between the thermoelectric couple module and the second substrate.

A fabrication method of a thermoelectric device, comprising:

• providing a first substrate, a plurality of conductive vias, and a first insulation layer, wherein the first substrate has a first surface and a second surface opposite to the first surface, the conductive vias run through the first substrate and respectively connect the first surface and the second surface, and the first insulation layer is disposed on the second surface;
• forming a first electrode pattern layer on the first insulation layer, wherein the first electrode pattern layer is coupled to the conductive vias;
• forming a plurality of first thermoelectric pillars on the first electrode pattern layer, wherein the first thermoelectric pillars are coupled to the first electrode pattern layer, and a material of the first thermoelectric pillars comprises a first type thermoelectric material;
• providing a second substrate and a second insulation layer, wherein the second insulation layer is disposed on the second substrate;
• forming a second electrode pattern layer on the second insulation layer;
• forming a plurality of second thermoelectric pillars on the second electrode pattern layer, wherein the second thermoelectric pillars are coupled to the second electrode pattern layer, and a material of the second thermoelectric pillars comprises a second type thermoelectric material;
• and
• disposing the second substrate on the first substrate to locate the first thermoelectric pillars and the second thermoelectric pillars between the first electrode pattern layer and the second electrode pattern layer, wherein the first thermoelectric pillars and the second thermoelectric pillars are connected with each other in series through the first electrode pattern layer and the second electrode pattern layer to form a thermoelectric couple module.