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US 2010/0149898 A1Published application
Antifuses and program circuits having the same
AssigneeSamsung Electronics Co., Ltd.
InventorsNam-Kyun Tak, Ki-Whan Song
Life of this patent
Estimating the term…
Abstract
Antifuses and program circuits having the same. The antifuses are embodied as a transistor. When a first power supply voltage is applied to a source, a first program voltage for causing impact ionization is applied to a gate and drain, and a second program voltage for causing channel initiated secondary electron/channel initiated secondary hole (CHISEL/CHISHL) is applied to a well, a dielectric material may be ruptured between the gate adjacent to the drain and the well so that an antifuse may be programmed.
Claims19
An antifuse, comprising:
- a substrate of a first conductivity type;
- a source and drain of a second conductivity type disposed apart from each other in a region of the substrate;
- a gate on the substrate between the source and drain;
- and
- a dielectric layer between the gate and substrate, the dielectric layer configured to rupture upon application of a first program voltage to the substrate, a second program voltage to the gate and drain, and a first power supply voltage to the source.
2 more elements
A program circuit, comprising:
- a program/precharge unit configured to precharge a first node in response to a power stabilization signal during an initialization operation, the program/precharge unit configured to program an antifuse in response to a program mode signal and an address signal during a program operation, the program/precharge unit configured to receive first and second program voltages, and the program/precharge unit configured to determine a voltage of the first node;
- and
- a latch unit configured to latch and invert the voltage of the first node and output an inverted voltage to an output node,
- wherein the antifuse includes a transistor in a well in a region of a substrate, the well connected to a pad,
- the transistor includes a source, drain, dielectric material and gate, the gate connected to the first node,
- the first program voltage is an impact ionization programming voltage,
- the second program voltage is a channel initiated secondary electron/channel initiated secondary hole (CHISEL/CHISHL) program voltage, and
- the dielectric material between the gate and the well adjacent to the drain is configured to rupture upon application of a first power supply voltage to the source, the first program voltage to the drain and the gate, and the second program voltage to the well.
5 more elements
A semiconductor device, comprising:
- a substrate of a first conductivity type;
- a source and drain of a second conductivity type disposed apart from each other in a region of the substrate;
- a gate on the substrate between the source and drain;
- a dielectric layer between the gate and substrate;
- and
- a control circuit configured to apply a first program voltage to the substrate, a second program voltage to the gate and drain, and a first power supply voltage to the source, such that the dielectric layer ruptures.
3 more elements
Dependencies are inferred from the claim text.