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US 2010/0149857 A1Published application
Reading Threshold Switching Memory Cells
OwnerStephen Tanginventor
Life of this patent
Estimating the term…
Abstract
Using the voltage across a threshold switching cell to sense the state of the cell, rather than sensing current through the cell, may result in a faster read. In some embodiments, current consumption during reading of conductive states may be reduced by using a capacitor coupled across the cell.
Claims25
A method comprising:
- reading the state of a threshold switching memory cell using a capacitor coupled in parallel with the cell.
A threshold switching memory comprising:
- a memory cell;
- a capacitor selectively connectable across said cell;
- and
- a comparator to compare a voltage across said capacitor to a reference voltage to determine the state of said cell.
1 more element
A memory comprising:
- a phase change memory cell;
- a switch;
- and
- a capacitor selectively connectable by said switch across said memory cell.
1 more element
Dependencies are inferred from the claim text.