Methods for Manufacturing RFID Tags and Structures Formed Therefrom

An integrated circuit comprising:

• a) an electrically active substrate;
• b) a dielectric layer on the substrate;
• c) a plurality of first semiconductor layer elements comprising a thin film transistor channel region in a first region of the substrate and a first diode layer element in a second region of the substrate;
• d) a plurality of second semiconductor layer elements comprising a second semiconductor layer in the first region of the substrate and a second diode layer element in the second region of the substrate;
• and
• e) a plurality of metal elements on or over the first semiconductor layer elements and the second semiconductor layer elements, the metal elements comprising a metal contact in the first region of the substrate and a metal gate over the thin film transistor channel region, and a diode contact in the second region of the substrate.

An integrated circuit comprising:

• a) an electrically active substrate;
• b) a dielectric layer on the substrate;
• c) a plurality of first semiconductor elements comprising a thin film transistor channel region in a first region of the substrate, a first diode layer element in a second region of the substrate, and a first capacitor plate in a third region of the substrate;
• d) a plurality of second semiconductor layer elements comprising a second semiconductor layer in the first region of the substrate and a second diode layer element in the second region of the substrate;
• and
• e) a plurality of metal elements on or over the first semiconductor layer elements and the second semiconductor layer elements, the metal elements comprising a metal contact in the first region of the substrate and a metal gate over the thin film transistor channel region, a diode contact in the second region of the substrate, and a second capacitor plate in the third region of the substrate.