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AssigneeHitachi Kokusai Electric Inc.
InventorsNaoto Nakamura, Iwao Nakamura, Tomoharu Shimada, Kenichi Ishiguro, Sadao Nakashima
Estimating the term…
A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided. A substrate support is formed from a main body portion and a supporting portion. In the main body portion, a plurality of placing portions extend parallel, and supporting portions are provided on the placing portions. A substrate is placed on the supporting portion. The supporting portion has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion.
A supporting portion for supporting a substrate for heat-treating the substrate, wherein the supporting portion is formed from a silicon plate-like-member, a thickness of the supporting portion is not less than 3 mm and not more thank 10 mm, and the supporting portion is not in contact with a periphery of the substrate.
A supporting portion for supporting a substrate for heat-treating the substrate, wherein the supporting portion is formed from a silicon plate-like-member, a thickness of the supporting portion is not less than 3 mm and not more thank 10 mm, the supporting portion is not in contact with a periphery of the substrate, and a substrate-placing face of the supporting portion, on which the substrate is placed, is coated with a film or films comprising one or more materials including silicon carbide, silicon nitride, polycrystalline silicon, silicon oxide, glassy carbon, and microcrystalline diamond.
A substrate support for supporting a substrate for heat-treating the substrate, wherein the substrate support has a main body portion and a supporting portion provided on the main body portion, the supporting portion being in contact with the substrate, the supporting portion is formed from a silicon plate-like member, a thickness of the supporting portion is not less than 3 mm and not more than 10 mm, and the supporting portion is not in contact with a periphery of the substrate.
A substrate support for supporting a substrate for heat-treating the substrate, wherein the substrate support has a main body portion and a supporting portion provided on the main body portion, the supporting portion being in contact with the substrate, the supporting portion is formed from a silicon plate-like member, a thickness of the supporting portion is not less than 3 mm and not more than 10 mm, and the supporting portion is not in contact with a periphery of the substrate, and a substrate-placing face of the supporting portion, on which the substrate is placed, is coated with a film or films comprising one or more materials including silicon carbide, silicon nitride, polycrystalline silicon, silicon oxide, glassy carbon, and microcrystalline diamond.
A substrate support for supporting a substrate for heat-treating the substrate, wherein the substrate support has a supporting portion that is in contact with the substrate and a plate that supports the supporting portion and a main body portion which supports the plate, the supporting portion is formed from a silicon plate-like member and a thickness of the supporting portion is not less than 3 mm and not more than 10 mm, and a diameter of the supporting portion is smaller than a diameter of the substrate and a diameter of the plate.
Dependencies are inferred from the claim text.