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US 2010/0148305 A1Published application
Semiconductor Device and Fabricating Method Thereof
OwnerJong Yong Yuninventor
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Abstract
A semiconductor device and fabricating method thereof are disclosed. The present invention includes an insulating layer on a semiconductor substrate, a contact plug in and protruding from the insulating layer, and a capacitor on the insulating layer and the exposed contact plug, having a dome shape.
Claims20
A semiconductor device comprising:
- an insulating layer on a semiconductor substrate;
- a contact plug in and protruding from the insulating layer;
- and
- a capacitor on the insulating layer and the protruding contact plug, having a dome shape.
1 more element
A method of fabricating a capacitor, comprising the steps of:
- forming a contact plug in an insulating layer on a semiconductor substrate;
- exposing an upper portion of the contact plug by etching part of the insulating layer adjacent to the upper portion of the contact plug;
- and
- forming a dome-shaped capacitor on the insulating layer and the exposed contact plug.
1 more element
Dependencies are inferred from the claim text.