Method of manufacturing semiconductor device, and semiconductor device
AssigneeNEC Electronics Corporation
InventorKazuhisa Tajima
Life of this patent
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Abstract
A method of manufacturing a semiconductor device of the present invention include a step of forming, in a substrate, a first trench, and a second trench which crosses the first trench; a step of forming a film over the entire surface of the substrate so as to fill the first trench and the second trench; and a step of removing a portion of the film which resides over the top surface of the substrate, so as to leave the film in the first trench and the second trench; wherein in the step of forming the first trench and the second trench, a projection is formed in a portion of intersection of the first trench and the second trench, so as to extend from one of corners of the portion of intersection towards the center thereof in a plan view.
Claims10
A method of manufacturing a semiconductor device comprising:
- forming, in a substrate, a first trench, and a second trench which crosses said first trench;
- forming a film over the entire surface of said substrate so as to fill said first trench and said second trench;
- and
- removing a portion of said film which resides over the top surface of said substrate, so as to leave said film in said first trench and said second trench;
- wherein in said forming said first trench and said second trench, a projection is formed in a portion of intersection of said first trench and said second trench, so as to extend from one of corners of said portion of intersection towards the center thereof in a plan view.
A semiconductor device comprising:
- a substrate;
- a first trench formed in said substrate;
- a second trench formed in said substrate to cross said first trench;
- a projection which is formed in a portion of intersection of said first trench and said second trench, so as to extend from one of corners of said portion of intersection towards the center thereof in a plan view;
- and
- a film formed so as fill said first trench and said second trench.
Dependencies are inferred from the claim text.