Semiconductor Device and Fabricating Method Thereof
AssigneeDongbu HiTek Co., Ltd.
InventorDong Woo KANG
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Abstract
A semiconductor device and fabricating method thereof are disclosed. The method includes forming a polysilicon layer on a semiconductor substrate including a high-voltage area and a low-voltage area, partially etching the polysilicon layer in the low-voltage area, forming an anti-reflective layer on the polysilicon layer to reduce a step difference between the high-voltage and low-voltage areas, forming a photoresist pattern in the high-voltage and low-voltage areas, and forming a high-voltage gate and a low-voltage gate by etching the polysilicon layer using the photoresist pattern as an etch mask.
Claims13
A method of fabricating a semiconductor device, comprising:
- forming a polysilicon layer on a semiconductor substrate including a high-voltage area and a low-voltage area;
- partially etching the polysilicon layer in the low-voltage area;
- forming an anti-reflective layer on the partially etched polysilicon layer to reduce a step difference between the high-voltage and low-voltage areas;
- forming a photoresist pattern in the high-voltage and low-voltage areas, respectively;
- and
- forming a high-voltage gate and a low-voltage gate by etching the partially etched polysilicon layer using the photoresist pattern as an etch mask.
A semiconductor device, comprising:
- a silicon substrate comprising a high-voltage area and a low-voltage area;
- a high-voltage gate in the high-voltage region, the high-voltage gate comprising a first polysilicon layer;
- and
- a low-voltage gate in the low-voltage area adjacent to the high-voltage area, the low-voltage gate comprising a second polysilicon layer having a thickness smaller than that of the high-voltage gate.
Dependencies are inferred from the claim text.