Resistors and Methods of Manufacture Thereof
OwnerKnut Stahrenberg, Karl-Heinz Bach +4inventors
InventorsKnut Stahrenberg, Karl-Heinz Bach, Manfred Eller, Roland Hampp, Jin-Ping Han, O Sung Kwon
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Abstract
Resistors, semiconductor devices, and methods of manufacture thereof are disclosed. In one embodiment, a method of fabricating a resistor includes forming a semiconductive material over a workpiece, and patterning at least the semiconductive material, forming a gate of a transistor in a first region of the workpiece and forming a resistor in a second region of the workpiece. At least one substance is implanted into the semiconductive material of the gate of the transistor or the resistor so that the semiconductive material is different for the gate of the transistor and the resistor.
Claims22
A method of fabricating a resistor, the method comprising:
- forming a semiconductive material over a workpiece;
- patterning at least the semiconductive material, forming a gate of a transistor in a first region of the workpiece and forming a resistor in a second region of the workpiece;
- and
- implanting at least one substance into the semiconductive material of the gate of the transistor or the resistor so that the semiconductive material is different for the gate of the transistor and the resistor.
A method of fabricating a semiconductor device, the method comprising:
- forming a gate dielectric material over a workpiece;
- forming a metal layer over the gate dielectric material;
- forming a semiconductive material over the metal layer;
- patterning the semiconductive material, the metal layer, and the gate dielectric material, forming a gate of at least one transistor in a first region of the workpiece and forming at least one resistor in a second region of the workpiece;
- and
- implanting at least one substance into the semiconductive material of the gate of the at least one transistor or the at least one resistor so that the semiconductive material is different for the gate of the at least one transistor and the at least one resistor.
A semiconductor device, comprising:
- a transistor disposed in a first region of a workpiece, the transistor including a gate comprising a semiconductive material;
- and
- a resistor disposed in a second region of the workpiece, the resistor comprising the semiconductive material, wherein the semiconductive material of the resistor in the second region of the workpiece is implanted with a different substance than the semiconductive material of the transistor in the first region of the workpiece is implanted with, or wherein the semiconductive material of the transistor in the first region of the workpiece is implanted with a substance and the semiconductive material of the resistor in the second region of the workpiece is not implanted with the substance.
Dependencies are inferred from the claim text.