Lateral high-voltage mos transistor with a resurf structure

A high-voltage DMOS transistor comprising

• a semiconductor substrate of a first conductivity type;
• a doped body region of the first conductivity type at a substrate surface of the semiconductor substrate;
• a source region of a second conductivity type that is inverse to the first conductivity type, which source region is embedded in the doped body region at the substrate surface;
• a channel region formed at the substrate surface between the source region and an edge of the doped body region;
• a gate electrode formed above the channel region electrically insulated from a gate isolation region;
• a drift region of the second conductivity type, which is located in an area of the semiconductor substrate that is adjacent to the channel region and faces away from the source region;
• a drain region of the second conductivity type adjacent to the drift region;
• and
• a plurality of doped RESURF regions of the first conductivity type In the drift region, wherein the doped RESURF regions are separated from each other by drift region sections in a first lateral direction (y), which is parallel to the substrate surface and which is orthogonal to a line connecting the source region and the drain region, hereinafter the length direction, and also in a depth direction (z), which is orthogonal to the substrate surface, such that in each of said two directions an alternating arrangement of regions of the first and second conductivity types, respectively, is provided.