Semiconductor device and method for manufacturing the same

An apparatus, comprising:

• a substrate over which a device isolation layer, a first conductive type well, and a drain region are formed;
• a trench formed by etching a portion of the substrate;
• a second conductive type body formed in the substrate in a shape enclosing the trench;
• a first conductive type source region and a second conductive type contact region, both formed in the second conductive type body;
• and
• a first gate electrode formed over the substrate and of which at least a portion is formed in the trench.

A method, comprising:

• implanting impurity in a substrate over which a first conductive type deep well is formed;
• forming a trench by etching a portion of the substrate;
• forming a second conductive type body on one side of the trench and a lower substrate;
• forming a polysilicon over an upper side of the substrate and in the trench;
• forming first and second gate electrodes by patterning the polysilicon;
• and
• forming a first conductive type source region and drain region in the substrate.