Semiconductor device and method of manufacturing the same
AssigneeTokyo Electron Limited
InventorsKoji AKIYAMA, Hirokazu HIGASHIJIMA, Tetsushi OZAKI, Tetsuya SHIBATA
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Abstract
The semiconductor device has a stacked structure in which a tunnel oxide layer, a charge trapping layer, a blocking oxide layer, and a gate electrode are sequentially formed on a silicon substrate, wherein the blocking oxide layer includes a crystalline layer disposed adjacent to the charge trapping layer and an amorphous layer disposed adjacent to the gate electrode.
Claims14
A semiconductor device having a stacked structure in which a tunnel oxide layer, a charge trapping layer, a blocking oxide layer, and a gate electrode are sequentially formed on a silicon substrate,
- wherein the blocking oxide layer comprises a crystalline layer disposed adjacent to the charge trapping layer and an amorphous layer disposed adjacent to the gate electrode.
A semiconductor device having a stacked structure in which a tunnel oxide layer, a charge trapping layer, a blocking oxide layer, and a gate electrode are sequentially formed on a silicon substrate,
- wherein the charge trapping layer comprises a crystalline layer, and the blocking oxide layer comprises an amorphous layer.
A method of manufacturing a semiconductor device, in which a tunnel oxide layer, a charge trapping layer, a blocking oxide layer, and a gate electrode are sequentially formed on a silicon substrate, wherein the blocking oxide layer is formed using a method comprising:
- forming a crystalline layer on the charge trapping layer;
- and
- forming an amorphous layer over the crystalline layer.
A method of manufacturing a semiconductor device, in which a tunnel oxide layer, a charge trapping layer, a blocking oxide layer, and a gate electrode are sequentially formed on a silicon substrate, wherein the blocking oxide layer is formed using a method comprising:
- forming a first amorphous layer on the charge trapping layer;
- forming a second amorphous layer, which is not easily crystallized by the first amorphous layer, on the first amorphous layer;
- and
- crystallizing the first amorphous layer by heating at a temperature at which the first amorphous layer is to be crystallized and the second amorphous layer is not to be crystallized.
A method of manufacturing a semiconductor device, in which a tunnel oxide layer, a charge trapping layer, a blocking oxide layer, and a gate electrode are sequentially formed on a silicon substrate,
- wherein forming of the charge trapping layer comprises forming a crystalline layer, and
- forming of the blocking oxide layer comprises forming an amorphous layer.
Dependencies are inferred from the claim text.