Semiconductor device and manufacturing method thereof
OwnerJae Yuhn Mooninventor
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Abstract
Disclosed are a semiconductor device and a manufacturing method thereof. The semiconductor device includes a first insulating layer pattern on a semiconductor substrate, a second insulating layer including fluorine on the first insulating layer pattern, a third insulating layer pattern on the second insulating layer pattern, and a polysilicon pattern on the third insulating layer pattern. The fluorine is included in the second insulating layer that may be a nitride layer that stores data in a flash memory device, so that data retention and reliability are improved without exerting an influence upon capacitor characteristics.
Claims12
A semiconductor device comprising:
- a first insulating layer pattern on a semiconductor substrate;
- a second insulating layer pattern including fluorine on the first insulating layer pattern;
- a third insulating layer pattern on the second insulating layer pattern;
- and
- a polysilicon pattern on the third insulating layer pattern.
A method of manufacturing a semiconductor device, the method comprising:
- forming a first insulating layer on a semiconductor substrate;
- forming a second insulating layer comprising fluorine on the first insulating layer;
- forming a third insulating layer on the second insulating layer;
- forming a polysilicon layer on the third insulating layer;
- and
- forming a gate pattern by patterning the polysilicon layer, the third insulating layer, the second insulating layer, and the first insulating layer.
Dependencies are inferred from the claim text.