Non-volatile memory and fabricating method thereof
AssigneeeMemory Technology Inc.
InventorsShih-Chen Wang, Wen-Hao Ching
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Abstract
A non-volatile memory is formed on a substrate. The non-volatile memory includes an isolation structure, a floating gate, and a gate dielectric layer. The isolation structure is disposed in the substrate to define an active area. The floating gate is disposed on the substrate and crosses over the active area. The gate dielectric layer is disposed between the floating gate and the substrate. The floating gate includes a first region and a second region. An energy band of the second region is lower than an energy band of the first region, so that charges stored in the floating gate are away from an overlap region of the floating gate and the gate dielectric layer.
Claims40
A non-volatile memory, disposed on a substrate, comprising:
- an isolation structure disposed in the substrate to define an active area;
- a gate dielectric layer disposed on the active area over the substrate;
- and
- a floating gate disposed upon the gate dielectric layer and the isolation structure, and across the active area, wherein the floating gate comprises a first region and a second region, the first region is at least disposed above the interface of the isolation structure, the second region is disposed away from interface of the active area and the isolation structure, and the energy band levels of the first region and the second region are made different by doping process so as to keep most of charges stored in the second region of the floating gate.
A non-volatile memory, disposed on a substrate, comprising:
- an isolation structure disposed in the substrate to define an active area;
- a gate dielectric layer disposed on the active area over the substrate;
- and
- a floating gate disposed upon the gate dielectric layer and the isolation structure, and across the active area, wherein the floating gate comprises a first region and a second region, the first region is disposed adjacent to gate dielectric layer, the second region is disposed apart from the gate dielectric layer, and the energy band levels of the first region and the second region are made different by doping process so as to keep most of charges stored in the second region of the floating gate.
A fabricating method of a non-volatile memory, comprising:
- providing a substrate, an isolation structure being formed in the substrate to define an active area;
- forming a gate dielectric layer on the active area over the substrate;
- forming a floating gate on the gate dielectric layer, and across the active area;
- performing a first doping process to form a first doping region in a portion of the floating gate;
- and
- performing a second doping process to form a second doping region in the other portion of the floating gate, wherein an energy band level of the second region is different from an energy band level of the first region, so as to keep most of charges stored in the second region of the floating gate, away from an overlap region of the floating gate and the gate dielectric layer.
A fabricating method of a non-volatile memory, comprising:
- providing a substrate, an isolation structure being formed in the substrate to define an active area;
- forming a gate dielectric layer on the active area over the substrate;
- forming a floating gate consisting of conductive materials on the gate dielectric layer, and across the active area;
- and
- performing a first doping process to form a first region in a portion of the floating gate, therefore energy band levels of a second region of the floating gate are different from energy band levels of the first region, so as to keep charges mostly stored in the second region of the floating gate, away from an overlap region of the floating gate and the gate dielectric layer.
Dependencies are inferred from the claim text.