Semiconductor and manufacturing method of the same
AssigneeHynix Semiconductor Inc.
InventorsYoung Man Cho, Won Sun Seo
Life of this patent
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AssigneeHynix Semiconductor Inc.
InventorsYoung Man Cho, Won Sun Seo
Estimating the term…
A semiconductor device includes a gate formed on a semiconductor substrate. A first junction region is formed on a first side of the gate and a second junction region formed on a second side of the gate. A bit line is formed over the gate to be electrically coupled with the first junction region. A first metal plug is formed electrically coupling the second junction region. A bit line contact plug is provided between the first junction region and the bit line, and electrically couples the first junction region and the bit line. A second metal plug is formed over the first metal plug and electrically couples the first metal plug. The junction region of a gate in a core or peripheral region is connected to the metal line using a metal plug so that bit lines formed in the core and peripheral area can have a pattern similar to that formed in a cell region.
A semiconductor device comprising:
The method according to claim 13, wherein forming the first metal plug comprises:
The method according to claim 13, further comprising:
The method according to claim 13, wherein
The method according to claim 13, wherein
The method according to claim 13,
The method according to claim 13, wherein, the bit line has a substantially uniform width.
Dependencies are inferred from the claim text.