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US 2010/0148225 A1Published application
Low power memory device with jfet device structures
AssigneeMicron Technology, Inc.
InventorChandra Mouli
Life of this patent
Estimating the term…
Abstract
There is provided a low power memory device with JFET device structures. Specifically, a low power memory device is provided that includes a plurality memory cells having a memory element and a JFET access device electrically coupled to the memory element. The memory cells may be isolated using diffusion based isolation.
Claims51
A memory device comprising:
- a plurality of memory cells, the memory cells comprising:
- a memory element;
- and
- a JFET access device electrically coupled to the memory element.
1 more element
A method of manufacturing a DRAM memory cell comprising:
- forming a diffusion based isolation region;
- forming a channel region in an area created by the diffusion based isolation region;
- and
- forming a gate in physical contact with the channel region.
1 more element
A method of isolating memory cells comprising:
- forming trenches less than 300 Angstroms deep;
- filling the trenches with a material having a higher bandgap than silicon;
- forming a thermal oxide over the high bandgap material;
- and
- diffusing ions into the thermal oxide.
2 more elements
A memory cell comprising:
- a JFET access device comprising:
- a channel region;
- a source region on a first end of the channel region and a drain region on a second end of the channel region;
- and
- a gate formed directly over the channel region.
2 more elements
A Fin-JFET comprising:
- a Fin channel region formed in a semiconductor substrate;
- and
- a gate formed directly over the Fin channel region.
A transistor comprising:
- a gate formed around a channel region, wherein there is no gate dielectric between the gate and channel;
- and
- a source region and a drain region conductively coupled to the channel region.
A transistor comprising:
- a Fin channel region;
- a gate formed on the surface of the channel region;
- and
- an elevated source region and an elevated drain region formed on the Fin channel.
1 more element
Dependencies are inferred from the claim text.