US 2010/0148214 A1Published application

Semiconductor device internally having insulated gate bipolar transistor

AssigneeMitsubishi Electric Corporation

InventorTomohide TERASHIMA

Life of this patent

Estimating the term…

Loading patent…

Abstract

The semiconductor device includes a P-type semiconductor region and an MOS transistor. MOS transistor includes a gate electrode, a collector electrode, a drain electrode, an N-type impurity region and a P-type impurity region. N-type impurity region is electrically connected to the drain electrode. P-type impurity region is electrically connected to the collector electrode. P-type impurity region is electrically connected to the drain electrode. The semiconductor device further includes an N-type impurity region and an electrode. N-type impurity region is electrically connected to the gate electrode. The electrode is formed on the P-type semiconductor region with an insulating film therebetween, and is electrically connected to gate electrode. Thereby, an element footprint can be reduced while maintaining characteristics.

Claims12

Dependent claims

A semiconductor device, comprising:

a semiconductor substrate;
a first semiconductor region of a first conductivity type formed in said semiconductor substrate;
an MOS transistor of the first conductivity type formed at a surface of said semiconductor substrate,
said MOS transistor of the first conductivity type including a gate electrode, a source electrode, a drain electrode, a second semiconductor region of a second conductivity type having a channel formed by a potential difference between said gate electrode and said source electrode, formed in said first semiconductor region and electrically connected to said drain electrode, a third semiconductor region of the first conductivity type formed in said second semiconductor region and electrically connected to said source electrode, and a fourth semiconductor region of the first conductivity type formed in said second semiconductor region and electrically connected to said drain electrode;
a fifth semiconductor region of the second conductivity type formed in said first semiconductor region, opposed to said second semiconductor region with said first semiconductor region therebetween and electrically connected to said gate electrode;
and
an electrode formed on said first semiconductor region located between said second and fifth semiconductor regions with an insulating film therebetween, and electrically connected to said gate electrode.

4 more elements

A semiconductor device, comprising:

a semiconductor substrate;
a first semiconductor region of a first conductivity type formed in said semiconductor substrate;
an MOS transistor of the first conductivity type formed at a surface of said semiconductor substrate,
said MOS transistor of the first conductivity type including a gate electrode, a source electrode, a drain electrode, a second semiconductor region of a second conductivity type having a channel formed by a potential difference between said gate electrode and said source electrode, formed in said first semiconductor region and electrically connected to said drain electrode, a third semiconductor region of the first conductivity type formed in said second semiconductor region and electrically connected to said source electrode, and a fourth semiconductor region of the first conductivity type formed in said second semiconductor region and electrically connected to said drain electrode;
and
a fifth semiconductor region of the second conductivity type formed in said first semiconductor region, opposed to said second semiconductor region with said first semiconductor region therebetween and electrically connected to said gate electrode, wherein
said first semiconductor region includes a heavily doped region formed at said semiconductor substrate surface located between said second and fifth semiconductor regions, and a lightly doped region containing impurities of the first conductivity type at a lower concentration than said heavily doped region.

4 more elements

A semiconductor device, comprising:

a semiconductor substrate;
a first semiconductor region of a first conductivity type formed in said semiconductor substrate;
an MOS transistor of the first conductivity type formed at a surface of said semiconductor substrate,
said MOS transistor of the first conductivity type including a gate electrode, a source electrode, a drain electrode, a second semiconductor region of a second conductivity type having a channel formed by a potential difference between said gate electrode and said source electrode, formed in said first semiconductor region and electrically connected to said drain electrode, a third semiconductor region of the first conductivity type formed in said second semiconductor region and electrically connected to said source electrode, and a fourth semiconductor region of the first conductivity type formed in said second semiconductor region and electrically connected to said drain electrode;
and
a fifth semiconductor region of the second conductivity type formed in said first semiconductor region, opposed to said second semiconductor region with said first semiconductor region therebetween and electrically connected to said gate electrode, wherein
each of said second and fifth semiconductor regions is formed by implanting the impurities, and a diffusion depth of said fifth semiconductor region is smaller than a diffusion depth of said second semiconductor region.

4 more elements

A semiconductor device, comprising:

a semiconductor substrate;
a first semiconductor region of a first conductivity type formed in said semiconductor substrate;
an MOS transistor of the first conductivity type formed at a surface of said semiconductor substrate,
said MOS transistor of the first conductivity type including a gate electrode, a source electrode, a drain electrode, a second semiconductor region of a second conductivity type having a channel formed by a potential difference between said gate electrode and said source electrode, formed in said first semiconductor region and electrically connected to said drain electrode, a third semiconductor region of the first conductivity type formed in said second semiconductor region and electrically connected to said source electrode, and a fourth semiconductor region of the first conductivity type formed in said second semiconductor region and electrically connected to said drain electrode;
a fifth semiconductor region of the second conductivity type formed in said semiconductor substrate and electrically connected to said gate electrode;
and
an insulating film formed in said first semiconductor region and isolating said second and fifth semiconductor regions from each other.

4 more elements

Dependencies are inferred from the claim text.