Group iii nitride compound semiconductor light emitting device and manufacturing method thereof

A method of manufacturing a Group III nitride compound semiconductor light emitting device comprising the steps of:

• a step of laminating, on an n-type semiconductor layer and an active layer composed of a multiple quantum well structure, a first p-type semiconductor layer of a super lattice structure comprising, an undoped film formation process in which the undoped film that has a composition AlxGa1-xN (x indicating composition ratio, being within a range of 0<x≦0.4) and that contains no dopant is laminated by means of a MOCVD method with use of a first reactive gas at least containing an Al source, a Ga source, and a nitrogen source;
• and a doped film formation process in which a doped film that has a composition AlyGa1-yN (y indicating composition ratio, being within a range of 0≦y<0.4) and that contains a dopant is laminated by means of the MOCVD method with use of a second reactive gas at least containing a Ga source, a nitrogen source, and a dopant source, to thereby form a first p-type semiconductor layer of a superlattice structure in which said undoped film and said doped film are alternately laminated a plurality of times;
• and
• a step of laminating a second p-type semiconductor layer on said first p-type semiconductor layer.