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US 2010/0148142 A1Published application
Aluminum copper oxide based memory devices and methods for manufacture
AssigneeMacronix International Co., Ltd.
InventorsWEI-CHIH CHIEN, Kuo-Pin Chang, Yi-Chou Chen, Erh-Kun Lai, Kuang-Yeu Hsieh
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Abstract
Memory devices are described along with methods for manufacturing. A memory device as described herein includes a first electrode and a second electrode. The memory device further includes a diode and an anti-fuse metal-oxide memory element comprising aluminum oxide and copper oxide. The diode and the metal-oxide memory element are arranged in electrical series between the first electrode and the second electrode.
Claims21
A memory device comprising:
- a first electrode;
- a second electrode;
- a diode;
- and
- an anti-fuse metal-oxide memory element comprising aluminum oxide and copper oxide, the diode and the metal-oxide memory element arranged in electrical series between the first electrode and the second electrode.
2 more elements
A memory device comprising:
- a plurality of word lines;
- a plurality of bit lines;
- and
- a plurality of memory cells located between the word lines and bit lines, each of the memory cells in the plurality of memory cells comprising
- a diode;
- and
- an anti-fuse metal-oxide memory element comprising aluminum oxide and copper oxide, the diode and the metal-oxide memory element arranged in electrical series between a corresponding word line in the plurality of word lines and a corresponding bit line in the plurality of bit lines.
4 more elements
A method for manufacturing a memory device, the method comprising:
- forming a first electrode;
- forming a diode;
- forming an anti-fuse metal-oxide memory element comprising aluminum and copper;
- and
- forming a second electrode, the diode and the metal-oxide memory element arranged in electrical series between the first electrode and the second electrode.
2 more elements
Dependencies are inferred from the claim text.