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US 2010/0148125 A1Published application
Method of forming semiconductor wells
AssigneeTexas Instruments Incorporated
InventorsSeetharaman Sridar, Marie Denison, Sameer Pendharkar
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Abstract
A method is provided of forming a semiconductor device. A substrate is provided having a dielectric layer formed thereover. The dielectric layer covers a protected region of the substrate, and has a first opening exposing a first unprotected region of the substrate. A first dopant is implanted into the first unprotected region through the first opening in the dielectric layer, and into the protected region through the dielectric layer.
Claims20
A method of forming a semiconductor device, comprising:
- providing a substrate having a dielectric layer formed thereover, said dielectric layer covering a protected region of said substrate, and said dielectric layer having a first opening exposing a first unprotected region of said substrate;
- and
- implanting a first dopant into said first unprotected region through said first opening and into said protected region through said dielectric layer.
A semiconductor device comprising:
- a substrate having a first doped region and a second doped region,
- wherein said first doped region is formed by implanting a first dopant through a dielectric layer over a protected region of said substrate, and said second doped region is formed by implanting a second dopant through a first opening in said dielectric layer into a first unprotected region of said substrate.
A method of forming a semiconductor device, comprising
- patterning a resist layer over a dielectric layer formed on a substrate;
- removing exposed portions of said dielectric layer;
- implanting a first dopant into a first and a second unprotected region of said substrate through openings in said dielectric layer, resulting in a first and a second doped region;
- patterning a resist layer over said dielectric layer, exposing said second doped region and a portion of said dielectric layer, but leaving a remaining portion of said resist layer over said first doped region;
- implanting a second dopant into said second doped region through an opening in said dielectric layer;
- and
- implanting a third dopant into said second doped region through said opening, and into said substrate through said exposed portion of said dielectric layer, resulting in a third doped region.
4 more elements
Dependencies are inferred from the claim text.