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US 2010/0147380 A1Published application
Hybrid Photovoltaic Cell Using Amorphous Silicon Germanium Absorbers and Wide Bandgap Dopant Layers
AssigneeSeagate Technology LLC
InventorsSamuel Dacke Harkness, IV, Hans Jurgen Richter
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Abstract
A photovoltaic apparatus includes a p-layer having a bandgap greater than about 2 eV, an n-layer having a bandgap greater than about 2 eV, and an absorber layer between the p-layer and the n-layer, wherein the absorber layer includes SiGe. The ratio of Si to Ge in the absorber layer can be selected to obtain an absorber bandgap between about 1.1 and about 1.4 eV.
Claims14
A photovoltaic apparatus comprising:
- a p-layer having a bandgap greater than about 2 eV;
- an n-layer having a bandgap greater than about 2 eV;
- and
- an absorber layer between the p-layer and the n-layer, wherein the absorber layer includes SiGe.
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A photovoltaic apparatus comprising:
- a p-layer including ZnO;
- an n-layer including ZnO;
- and
- an absorber layer between the p-layer and the n-layer, wherein the absorber layer comprises amorphous silicon.
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A method of making an absorber layer in a photovoltaic device, the method comprising:
- providing a substrate;
- and
- using dc-magnetron or rf-magnetron sputtering to deposit a SiGe absorber layer on the substrate, wherein the sputtering is performed with a substrate temperature of less than about 300° C.;
- with an AR sputter gas pressure of less than about 10 mTorr, in a partial hydrogen environment;
- and at a deposition rate of less than about 10 nm/s.
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Dependencies are inferred from the claim text.