-Nitride Single-Crystal Growth Method

Abstract

This III-nitride single-crystal growth method, being a method of growing a AlxGa1-xN single crystal (4) by sublimation, is furnished with a step of placing source material (1) in a crucible (12), and a step of sublimating the source material (1) to grow AlxGa1-xN (0<x≦1) single crystal (4) in the crucible (12), with the AlyGa1-yN (0<y≦1) source (2) and an impurity element (3), which is at least one selected from the group consisting of IVb elements and IIa elements, being included in the source material (1). This growth method makes it possible to stably grow bulk III-nitride single crystals of low dislocation density and of favorable crystallinity.

Dependencies are inferred from the claim text.