US 2010/0145422 A1 · METHOD FOR MANUFACTURING AN IMPLANTABLE ELECTRONIC DEVICE

Abstract

A method of manufacturing an implantable electronic device, including: providing a silicon wafer; building a plurality of layers coupled to the wafer including an oxide layer coupled to the silicon wafer; a first reactive parylene layer coupled to the oxide layer, an electrode layer coupled to the first reactive parylene layer, and a second reactive parylene layer, coupled to the electrode layer, that chemically bonds to the first reactive polymer layer, and a second polymer layer coupled to the second reactive parylene layer; coating the plurality of layers with an encapsulation, and modifying the encapsulation and at least one of the plurality of layers to expose an electrode site in the electrode layer.

Claims20

Dependent claims

A method of manufacturing an implantable electronic device, comprising the steps of:

providing a silicon wafer;
building a plurality of layers coupled to the wafer, including:
∘ building an oxide layer coupled to the silicon wafer;
∘ building a first polymer layer coupled to the oxide layer;
∘ building a first reactive parylene layer coupled to the first polymer layer;
∘ building an electrode layer coupled to the first reactive parylene layer;
∘ building a second reactive parylene layer, coupled to the electrode layer, that chemically bonds to the first reactive polymer layer;
and
∘ building a second polymer layer coupled to the second reactive parylene layer;
coating the plurality of layers with an encapsulation;
and
modifying the encapsulation and at least one of the plurality of layers to expose an electrode site in the electrode layer.

9 more elements

Dependencies are inferred from the claim text.

Method for manufacturing an implantable electronic device

Life of this patent

Method for manufacturing an implantable electronic device

Life of this patent

Abstract

Claims20