Method for manufacture of semiconductor device

A method for manufacturing a semiconductor device comprising:

• designing a resist structure to be formed on a substrate, the resist structure comprising a film having antireflection function for exposure light and a resist provide on the film;
• designing an exposure condition of the resist such that a resist pattern is finished as designed, the resist pattern being obtained by exposing and developing the resist;
• obtaining criteria value for estimating influence of a resist pattern upon a dimension or shape of a device pattern, the resist pattern being obtained by exposing the resist under the designed exposure condition and developing the exposed resist, the device pattern being obtained by etching the resist structure by using the resist pattern as a mask;
• determining whether the designed exposure condition is acceptable or not based on the criteria value;
• and
• redesigning the exposure condition of the resist without changing the designed resist structure when the designed exposure condition is determined not acceptable.